VS-SD1553C22S30K Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-SD1553C22S30K Datasheet PDF : 11 Pages
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1E4
10 jo ules p er p ulse
6
4
2
1E3
1E2
1E1
1
0.8
0 .6
0 .4
SD 1 5 5 3 C ..S2 0 K S eri es
Trap e zoi dal Puls e
TJ = 1 5 0°C, V RRM = 8 0 0 V
tp
d v/ d t = 1 0 0 0 V/ µs
d i/d t = 300A /µs
1E2
1E3
Pulse Basew idth (µs)
1E4
Fig. 30 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
1E3
600 400 200 100 50 H z
1 0 00
2000
3 00 0
4 00 0
6000
1 00 0 0
15 0 0 0
20 0 0 0
SD 1 5 5 3 C ..S2 0K Se rie s
Tr ape z oi dal Pu ls e
TC = 5 5°C , VRRM = 8 0 0 V
tp
d v/d t = 10 0 0V /u s,
d i/dt = 300A /us
1E2
1E 1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 31 - Frequency Characteristics
1E4
10 joules p er pulse
6
4
2
1
0 .8
1E3
0.6
0.4
tp
1E2
1E 1
SD 1 5 5 3 C ..S2 0 K S er ie s
Tra pezoid al Pu lse
TJ = 1 5 0°C , V RRM= 8 0 0 V
d v/d t = 1000V /µs
d i/dt = 100A /µ s
1E2
1E3
Pulse Ba sew idth (µs)
1E4
Fig. 32 - Maximum Total Energy Loss
Per Pulse Characteristics
VS-SD1553C..K Series
Vishay Semiconductors
1E 4
1000 400 200 100 50 Hz
2 00 0
6 00 0
1 0 00 0
1E 3
1 50 0 0
20 0 0 0
SD 155 3C ..S2 0 K Se ri es
Tra pezoidal Pu lse
TC = 5 5°C , V RRM= 8 0 0 V
tp
d v/dt = 1000V/us,
d i/d t = 100A /us
1E 2
1E 1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 33 - Frequency Characteristics
1E4
10 jo ule s p er p ulse
6
4
2
1
0 .6
0 .4
1E3
0 .2
1E2
1E1
SD 1 5 5 3 C. .S3 0 K Se r ie s
Sin usoid al Pu lse
TJ = 1 50° C , VRRM= 1 0 0 0V
tp
d v/ dt = 1 00 0V / µs
1E2
1E3
Pulse Basew id th (µs)
1E4
Fig. 34 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
3000 2000 1000
4000
400 200 100 50 Hz
6 00 0
1 0 00 0
SD 1553C ..S30K Ser ies
Sin usoid al P u lse
TC = 5 5°C, VRRM = 1 0 0 0 V
tp
dv/d t = 1000V /us
1E3
1E 1
1E2
1E3
1E4
P ulse Basewidth (µs)
Fig. 35 - Frequency Characteristics
Revision: 15-Apr-14
8
Document Number: 93169
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