VS-SD1553C22S30K Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-SD1553C22S30K Datasheet PDF : 11 Pages
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70 0
60 0
I FM = 1500 A
Sine Pulse
50 0
1000 A
40 0
500 A
30 0
20 0
SD 1 5 5 3 C ..S2 0 K Se rie s
10 0
TJ = 1 5 0 ° C ; V r > 1 0 0 V
0
0 50 100 150 200 250 300
Rate O f Fall O f Fo rw ard Cu rrent - d i/dt ( A/µs)
Fig. 24 - Recovery Current Characteristics
8 .5
8
S D 1553C ..S 30K S eries
TJ = 1 5 0 °C ; V r > 1 0 0 V
7 .5
7
6 .5
IFM = 1500 A
6
Sine Pulse
5 .5
1000 A
5
500 A
4 .5
4
3 .5
10
1 00
10 0 0
Ra te Of Fall O f Fo rw ard C urrent - di/dt ( A/µs)
Fig. 25 - Recovery Time Characteristics
1 60 0
1 40 0
1 20 0
1 00 0
I FM = 1500 A
Sine Pu lse
1000 A
500 A
80 0
60 0
40 0
SD 1553C ..S3 0K S eries
20 0
TJ = 1 5 0 ° C ; V r > 1 0 0 V
0
0 50 100 150 200 250 300
Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /µs)
Fig. 26 - Recovery Charge Characteristics
VS-SD1553C..K Series
Vishay Semiconductors
70 0
IFM = 1500 A
60 0
Sine Pulse
1000 A
50 0
500 A
40 0
30 0
20 0
SD 1 5 5 3 C ..S3 0 K Se rie s
10 0
TJ = 1 5 0 ° C ; V r > 1 0 0 V
0
0 50 100 150 200 250 300
Rate O f Fa ll O f Fo rward C urren t - di/dt (A/µs)
Fig. 27 - Recovery Current Characteristics
1E4
6 10 jo u le s pe r p ulse
4
2
1
0.6
0.4
1E3
0.2
0.1
1E2
1E1
SD 1553C..S20K Seri es
Si nu soi da l Pu lse
tp
TJ = 1 5 0°C , V RRM= 8 0 0V
d v/ d t = 1 0 0 0 V/ µs
1E 2
1E3
Pulse Basew idth (µs)
1E4
Fig. 28 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
1E3
20 0 0
3000
40 0 0
6000
1000 400 200 100 50 Hz
10 0 0 0
15 0 00
2 0 00 0
SD 1553C ..S20K Seri es
Sin usoida l Pu lse
TC = 5 5°C , V RRM = 8 0 0 V
tp
d v/ dt = 1 00 0V / us
1E2
1E1
1E2
1E 3
1E4
Pulse Basewid th (µs)
Fig. 29 - Frequency Characteristics
Revision: 15-Apr-14
7
Document Number: 93169
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