VS-SD1553C22S30K Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-SD1553C22S30K Datasheet PDF : 11 Pages
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VS-SD1553C..K Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
Maximum I2t for fusing
Maximum I2√t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
SYMBOL
IF(AV)
IF(RMS)
IFSM
I2t
I2√t
VF(TO)1
VF(TO)2
rf1
rf2
VFM
TEST CONDITIONS
SD1553C..K
S20
S30
180° conduction, half sine wave
Double side (single side) cooled
1825 (865) 1650 (790)
55 (85) 55 (85)
25 °C heatsink temperature double side cooled
3100
2800
t = 10 ms No voltage
t = 8.3 ms reapplied
25 000
26 180
22 000
23 000
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ
maximum
21 030
22 010
3126
2854
18 500
19 370
2421
2210
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
2210
2018
1712
1563
t = 0.1 to 10 ms, no voltage reapplied
31 260 24 210
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
1.15
1.29
1.31
1.45
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.27
0.32
(I > π x IF(AV)), TJ = TJ maximum
Ipk = 4000 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
0.25
0.30
2.23
2.60
UNITS
A
°C
A
kA2s
kA2√s
V
mW
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
TEST CONDITIONS
TYPICAL VALUES
AT TJ = 150 °C
CODE
Ipk
trr AT 25 % IRRM
SQUARE dI/dt
Vr
trr AT 25 % IRRM
Qrr
Irr
(μs)
PULSE (A/μs) (V)
(μs)
(μC)
(A)
(A)
S20
2.0
S30
3.0
4.5
1000
100
- 50
5.0
650
240
780
260
IFM
trr
dir
t
dt
Qrr
IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
and storage temperature range
TJ, TStg
Maximum thermal resistance,
case junction to heatsink
RthJ-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
UNITS
-40 to 150
°C
0.04
K/W
0.02
22 250
N
(2250)
(kg)
425
g
DO-200AC (K-PUK)
ΔRthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
180°
0.0018
0.0019
120°
0.0021
0.0021
90°
0.0027
0.0027
60°
0.0039
0.0039
30°
0.0067
0.0067
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
0.0012
0.0012
0.0021
0.0021
0.0029
0.0029
0.0041
0.0041
0.0068
0.0068
TEST CONDITIONS
TJ = TJ maximum
UNITS
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 15-Apr-14
2
Document Number: 93169
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