STPS8L30(2016) Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
STPS8L30 Datasheet PDF : 9 Pages
| |||
STPS8L30
Characteristics
1.1
Characteristics (curves)
Figure 1: Average forward power dissipation
versus average forward current
5.0PF (AV) (W )
δ = 0.1 δ = 0.2
δ = 0.5
4.0
δ = 0.05
3.0
δ=1
2.0
1.0
0.0
0
2
IF(AV )(A )
4
6
T
δ=tp/T
tp
8
10
Figure 2: Average forward current versus ambient
temperature (δ = 0.5)
9
Rth(j-a) = Rth(j-c)
8
7
6
5
4
Rth(j-a) = 70 °C/W
3
2
1
0
0
25
50
75
100
125 150
Figure 3: Normalized avalanche power derating
versus pulse duration (Tj = 125 °C)
1 PARM(tP) / PARM(10 µs)
Figure 4: Relative variation of thermal impedance
junction to case versus pulse duration
Zth (j-c)/Rth(j-c )
1.0
0.8
0.1
0.6 δ = 0.5
0.01
0.001
1
0.4
δ = 0.2
T
0.2 δ = 0.1
tP(µs)
Single pulse
0.0
tp(s )
δ =tp/T
tp
10
100
1000 1E-4
1E-3
1E-2
1E-1
1E+0
Figure 5: Reverse leakage current versus reverse
voltage applied (typical values)
IR(m A )
3E+2
1E+2
Tj = 150 °C
Tj = 125 °C
1E+1
Figure 6: Junction capacitance versus reverse
voltage applied (typical values)
C (pF)
2000
1000
F= 1 MHz
VOSC = 30 mVRMS
Tj = 25 °C
1E+0
500
1E-1
1E-2
1E-3
0
Tj = 25 °C
5 10
VR (V )
15
20
200
100
25
30
1
VR (V)
10
40
DocID5515 Rev 5
3/9
Share Link: 