SUP90P06-09L-E3 Просмотр технического описания (PDF) - Vishay Semiconductors
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SUP90P06-09L-E3 Datasheet PDF : 8 Pages
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THERMAL RATINGS
200
150
100
Limited
50
by Package
0
0
25 50 75 100 125 150 175
TC - Case Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
SUP90P06-09L
Vishay Siliconix
1000
Limited by RDS(on)*
100
10
1
TC = 25 °C
Single Pulse
10 µs
100 µs
1 ms
10 ms
100 ms, DC
0.1
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1 Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
Notes:
P DM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73010.
Document Number: 73010
S10-2545-Rev. B, 08-Nov-10
www.vishay.com
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