SUP90P06-09L-E3 Просмотр технического описания (PDF) - Vishay Semiconductors

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производитель

SUP90P06-09L-E3

P-Channel 60 V (D-S) 175 °C MOSFET

Vishay Semiconductors 

SUP90P06-09L

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

2.0

VGS = 10 V

ID = 30 A

1.7

1.4

1.1

0.8

0.5

- 50 - 25 0

25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

On-Resistance vs. Junction Temperature

100

TJ = 150 °C

TJ = 25 °C

10

1

0.0

0.3

0.6

0.9

1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

1000

100

IAV (A) at TA = 25 °C

10

1

IAV (A) at TA = 150 °C

0.1

0.0001

0.001

0.01

0.1

1

tin (s)

Avalanche Current vs. Time

76

ID = 10 mA

72

68

64

60

56

- 50 - 25 0

25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

Drain Source Breakdown vs.

Junction Temperature

www.vishay.com

4

Document Number: 73010

S10-2545-Rev. B, 08-Nov-10

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