DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SUP90P06-09L-E3 Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге
Компоненты Описание
производитель
SUP90P06-09L-E3
Vishay
Vishay Semiconductors Vishay
SUP90P06-09L-E3 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
200
200
5V
160
VGS = 10 V thru 6 V
160
SUP90P06-09L
Vishay Siliconix
120
80
40
0
0
200
160
4V
2V
3V
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
Output Characteristics
TC = - 55 °C
25 °C
120
80
40
TC = 125 °C
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.020
0.016
120
125 °C
0.012
VGS = 4.5 V
VGS = 10 V
80
0.008
40
0.004
0
0 10 20 30 40 50 60 70 80
ID - Drain Current (A)
Transconductance
15 000
12 000
Ciss
9000
0.000
0
20
20
40
60
80
100 120
ID - Drain Current (A)
On-Resistance vs. Drain Current
16
VDS = 30 V
ID = 90 A
12
6000
8
3000
Coss
0 Crss
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 73010
S10-2545-Rev. B, 08-Nov-10
4
0
0 40 80 120 160 200 240 280 320
Qg - Total Gate Charge (nC)
Gate Charge
www.vishay.com
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]