SUP90P06-09L-E3 Просмотр технического описания (PDF) - Vishay Semiconductors

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SUP90P06-09L-E3

P-Channel 60 V (D-S) 175 °C MOSFET

Vishay Semiconductors 

SUP90P06-09L

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

VDS = - 60 V, VGS = 0 V

Zero Gate Voltage Drain Current

IDSS

VDS = - 60 V, VGS = 0 V, TJ = 125 °C

VDS = - 60 V, VGS = 0 V, TJ = 175 °C

On-State Drain Currenta

ID(on)

VDS= - 5 V, VGS = - 10 V

VGS = - 10 V, ID = - 30 A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 10 V, ID = - 30 A, TJ = 125 °C

VGS = - 10 V, ID = - 30 A, TJ = 175 °C

VGS = - 4.5 V, ID = - 20 A

Forward Transconductancea

gfs

VDS = - 15 V, ID = - 30 A

Dynamicb

Input Capacitance

Ciss

Output Capacitance

Coss

VGS = 0 V, VDS = - 25 V, f = 1 MHz

Reverse Transfer Capacitance

Crss

Total Gate Chargec

Qg

Gate-Source Chargec

Qgs

VDS = - 30 V, VGS = - 10 V, ID = - 90 A

Gate-Drain Chargec

Qgd

Gate Resistance

Rg

f = 1.0 MHz

Turn-On Delay Timec

td(on)

Rise Timec

Turn-Off Delay Timec

tr

td(off)

VDD = - 30 V, RL = 0.33 

ID  - 90 A, VGEN = - 10 V, Rg = 2.5 

Fall Timec

tf

Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b

Continuous Current

IS

Pulsed Current

ISM

Forward Voltagea

VSD

IF = - 50 A, VGS = 0 V

Reverse Recovery Time

trr

Peak Reverse Recovery Current

IRM(REC)

IF = - 50 A, dI/dt = 100 A/µs

Reverse Recovery Charge

Qrr

Notes:

a. Pulse test; pulse width  300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Min.

- 60

-1

- 120

20

Typ.

Max.

-3

± 100

-1

- 50

- 250

0.0074

0.0094

0.0093

0.0150

0.0190

0.0118

9200

975

760

160

40

36

3

20

190

140

300

- 1.0

60

-3

0.09

240

30

285

210

450

- 90

- 200

- 1.5

90

- 4.5

0.2

Unit

V

nA

µA

A



S

pF

nC



ns

A

V

ns

A

µC

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

2

Document Number: 73010

S10-2545-Rev. B, 08-Nov-10

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