SUP90P06-09L-E3 Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге

Компоненты Описание

производитель

SUP90P06-09L-E3

P-Channel 60 V (D-S) 175 °C MOSFET

Vishay Semiconductors 

SUP90P06-09L

Vishay Siliconix

P-Channel 60 V (D-S) 175 °C MOSFET

PRODUCT SUMMARY

VDS (V)

- 60

RDS(on) ()

0.0093 at VGS = - 10 V

0.0118 at VGS = - 4.5 V

ID (A)c

- 90

- 90

FEATURES

• TrenchFET® Power MOSFET

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• DC/DC Primary Switch

RoHS

COMPLIANT

TO-220AB

S

G

Drain connected to Tab

GD S

Top View

Ordering Information: SUP90P06-09L-E3 (Lead (Pb)-free)

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain Current (TJ = 175 °C)c

TC = 25 °C

TC = 125 °C

ID

Pulsed Drain Current

Avalanche Current

Single Pulse Avalanche Energya

IDM

IAS

L = 0.1 mH

EAS

Power Dissipation

TC = 25 °C

TA = 25 °C

PD

Operating Junction and Storage Temperature Range

TJ, Tstg

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient Free Air

Junction-to-Case

Notes:

a. Duty cycle  1 %.

b. See SOA curve for voltage derating.

c. Limited by package.

Symbol

RthJA

RthJC

Document Number: 73010

S10-2545-Rev. B, 08-Nov-10

Limit

- 60

± 20

- 90

- 67

- 200

- 65

211

250b

2.4

- 55 to 175

Limit

62

0.6

Unit

V

A

mJ

W

°C

Unit

°C/W

www.vishay.com

1

Share Link: