STF9N60M2 Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание

производитель

STF9N60M2

N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP and I2PAKFP packages

STMicroelectronics 

STF9N60M2, STFI9N60M2

Electrical characteristics

Figure 8. Capacitance variations

C

AM15870v1

(pF)

Figure 9. Output capacitance stored energy

Eoss

(µJ)

AM15874v1

1000

100

Ciss

2

10

Coss

1

1

Crss

0.1

0.1

1

10

100 VDS(V)

0

0 100 200 300 400 500 600 VDS(V)

Figure 10. Normalized gate threshold voltage vs

temperature

VGS(th)

(norm)

1.15

1.1

ID=250µA

AM15871v1

1.05

1.0

0.95

0.9

0.85

0.8

0.75

0.7

-50 -25 0 25 50 75 100 125 TJ(°C)

Figure 11. Normalized on-resistance vs

temperature

RDS(on)

(norm)

2.5

2.3

2.1

1.9

ID=3 A

VGS=10 V

AM15872v1

1.7

1.5

1.3

1.1

0.9

0.7

0.5

-50 -25 0

25 50 75 100 125 TJ(°C)

Figure 12. Source-drain diode forward

characteristics

Figure 13. Normalized V(BR)DSS vs temperature

VSD

(V)

1.4

1.2

1.0

AM15873v1

TJ=-50°C

V(BR)DSS

(norm)

1.11

1.09

1.07

1.05

ID=1mA

AM15867v1

0.8

0.6

TJ=150°C

TJ=25°C

0.4

0.2

0

0

1

23

4

5 ISD(A)

1.03

1.01

0.99

0.97

0.95

0.93

-50 -25 0 25 50 75 100 125 TJ(°C)

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