FDA20N50_F109 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDA20N50_F109 Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Device Marking
Device
FDA20N50
FDA20N50_F109
Package
TO-3PN
Reel Size
--
Tape Width
--
Quantity
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250A, TJ = 25C
ID = 250A, Referenced to 25C
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250A
VGS = 10V, ID = 11A
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 11A
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 250V, ID = 20A
RG = 25
VDS = 400V, ID = 20A
VGS = 10V
(Note 4)
(Note 4)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0V, IS = 22A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 20A
dIF/dt =100A/s
Min
500
--
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
0.50
--
--
--
--
--
0.20
24.6
2400
355
27
95
375
100
105
45.6
14.8
21.6
--
--
--
507
7.20
Max Unit
--
--
1
10
100
-100
V
V/C
A
A
nA
nA
5.0
V
0.23
--
S
3120 pF
465 pF
--
pF
200
ns
760
ns
210
ns
220
ns
59.5 nC
--
nC
--
nC
20
A
80
A
1.4
V
--
ns
--
C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 4.1mH, IAS = 22A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 22A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2012 Fairchild Semiconductor Corporation
2
FDA20N50_F109 Rev.C0
www.fairchildsemi.com
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