2N06L65 Просмотр технического описания (PDF) - Infineon Technologies
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производитель
2N06L65 Datasheet PDF : 9 Pages
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IPG20N06S2L-65
Parameter
Dynamic characteristics1)
Input capacitance3)
Output capacitance3)
Reverse transfer capacitance3)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics1, 3)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current1)
one channel active
Diode pulse current1)
one channel active
Diode forward voltage
Reverse recovery time1)
Symbol
Conditions
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=27.5 V,
V GS=10 V, I D=20 A,
R G=11 Ω
Q gs
Q gd
V DD=44 V, I D=20 A,
Qg
V GS=0 to 10 V
V plateau
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=15 A,
T j=25 °C
t rr
V R=27.5 V, I F=I S,
di F/dt =100 A/µs
min.
Values
typ.
Unit
max.
-
315
410 pF
-
90
120
-
35
50
-
2
- ns
-
3
-
-
10
-
-
7
-
-
1.2
1.6 nC
-
3.5
5.3
-
9.4
12
-
3.9
-V
-
-
20 A
-
-
80
-
1.0
1.3 V
-
30
- ns
Reverse recovery charge1, 3)
Q rr
-
28
- nC
1) Specified by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) Per channel
Rev. 1.0
page 3
2009-09-07
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