2N06L65 Просмотр технического описания (PDF) - Infineon Technologies
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2N06L65 Datasheet PDF : 9 Pages
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IPG20N06S2L-65
Parameter
Symbol
Conditions
Thermal characteristics1)
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
-
minimal footprint
6 cm2 cooling area2)
min.
Values
typ.
Unit
max.
-
-
3.5 K/W
-
100
-
-
60
-
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=14 µA
1.2
1.6
2.0
Zero gate voltage drain current3)
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
V DS=55 V, V GS=0 V,
T j=125 °C2)
-
Gate-source leakage current3)
I GSS
V GS=20 V, V DS=0 V
-
Drain-source on-state resistance3) R DS(on) V GS=4.5 V, I D=7.5A
-
V GS=10 V, I D=15A
-
1
100
1
100 nA
67
79 mΩ
53
65
Rev. 1.0
page 2
2009-09-07
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