M5M51008DFP Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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M5M51008DFP Datasheet PDF : 8 Pages
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ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Vcc
Supply voltage
VI
Input voltage
VO
Output voltage
Pd
Power dissipation
Topr
Operating temperature
Tstg
Storage temperature
* –3.0V in case of AC ( Pulse width ≤ 50ns )
Ver. 1.1
MITSUBISHI LSIs
M5M51008DFP,VP,RV,KV,KR -55H, -70H
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
Conditions
With respect to GND
Ta=25°C
Ratings
Unit
– 0.3*~7
V
– 0.3*~Vcc + 0.3
V
0~Vcc
V
700
mW
0~70
°C
– 65~150
°C
DC ELECTRICAL CHARACTERISTICS (Ta=0~70°C, Vcc=5V±10%, unless otherwise noted)
Symbol
Parameter
VIH
High-level input voltage
Test conditions
Limits
Unit
Min
Typ
Max
2.2
Vcc + 0.3
V
VIL
Low-level input voltage
–0.3*
0.8
V
IOH= –1.0mA
VOH
High-level output voltage
IOH= –0.1mA
2.4
V
Vcc – 0.5
V
VOL
Low-level output voltage IOL=2mA
II
Input current
VI=0~Vcc
IO
Output current in off-state
S1=VIH or S2=VIL or OE=VIH
VI/O=0~VCC
0.4
V
±1
µA
±1
µA
ICC1
Active supply current
(AC, MOS level)
S1 ≤ 0.2V, S2 ≥ VCC–0.2V
other inputs ≤ 0.2V or ≥ VCC–0.2V
Output-open(duty 100%)
55ns
70ns
1MHz
39
80
34
70
mA
4
15
ICC2
Active supply current
(AC, TTL level)
ICC3
Stand-by current
ICC4
Stand-by current
S1=VIL,S2=VIH,
other inputs=VIH or VIL
Output-open(duty 100%)
1) S2 ≤ 0.2V,
other inputs=0~VCC
2) S1 ≥ VCC–0.2V,
S2 ≥ VCC–0.2V,
other inputs=0~VCC
S1=VIH or S2=VIL,
other inputs=0~VCC
55ns
70ns
1MHz
~25°C
-H ~40°C
~70°C
42
85
37
70
mA
5
15
2
6
µA
20
3
mA
* –3.0V in case of AC ( Pulse width ≤ 50ns )
CAPACITANCE (Ta=0~70°C, Vcc=5V±10% unless otherwise noted)
Symbol
CI
CO
Parameter
Input capacitance
Output capacitance
FP,VP,RV,KV
FP,VP,RV,KV
Test conditions
VI=GND, VI=25mVrms, f=1MHz
VO=GND,VO=25mVrms, f=1MHz
Note 1: Direction for current flowing into an IC is positive (no mark).
2: Typical value is Vcc = 5V, Ta = 25°C
Limits
Min Typ Max
Unit
8
pF
10
pF
MITSUBISHI
ELECTRIC
3
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