FJAFS1510ATU Просмотр технического описания (PDF) - Fairchild Semiconductor
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FJAFS1510ATU Datasheet PDF : 12 Pages
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ESBC Configured Electrical Characteristics(4)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
fT
Current Gain Bandwidth
IC = 0.1 A, VCE = 10 V
Product
15.4
MHz
Itf
ts
Vtf
Vtr
tc
Itf
ts
Vtf
Vtr
tc
VCSW
Inductive Current Fall Time VGS = 10 V, RG = 47 Ω,
Inductive Storage Time
VClamp = 500 V,
Inductive Voltage Fall Time IC=1 A, IB= 0.1 A, hFE = 10,
Inductive Voltage Rise Time LC = 1 mH,
Inductive Crossover Time SRF = 350 kHz
Inductive Current Fall Time VGS = 10 V, RG = 47 Ω,
Inductive Storage Time
VClamp = 500 V,
Inductive Voltage Fall Time IC = 5 A, IB = 1 A, hFE = 5,
Inductive Voltage Rise Time LC = 1 mH,
Inductive Crossover Time SRF = 350 kHz
Maximum Collector Source hFE = 5, IC = 6 A
Voltage at Turn-off without
Snubber
115
ns
670
ns
160
ns
95
ns
130
ns
12.5
ns
1100
ns
68
ns
110
ns
150
ns
1550
V
IGS(OS) Gate-Source Leakage
Current
VGS = ±20 V
1.0
nA
VCS(ON) Collector-Source On
VGS = 10 V, IC = 6 A, IB = 2 A, hFE = 3
0.426
V
Voltage
VGS = 10 V, IC = 4 A, IB = 1.3 A, hFE = 3
0.213
V
VGS = 10 V, IC = 2 A, IB = 0.67 A, hFE = 3
0.162
V
VGS = 10 V, IC = 1 A, IB = 0.2 A, hFE = 5
0.141
V
VGS(th) Gate Threshold Voltage
VBS = VGS, IB = 250 μA
1.9
V
Ciss Input Capacitance
(VGS=VCB=0)
VCS = 25 V, f = 1 MHz
470
pF
QGS(tot) Gate-Source Charge VCB=0 VGS = 10 V, IC = 6 A, VCS = 25 V
9
nC
rDS(ON) Static Drain to Source
On Resistance
VGS = 10 V, ID = 6.3 A
VGS = 10 V, ID = 6.3 A, TA = 125°C
21
mΩ
30
mΩ
VGS = 4.5 V, ID = 5.5 A
26
mΩ
Notes:
4. Used typical FDC655 MOSFET specifications in table. Table could vary if other Fairchild MOSFETs are used.
© 2012 Fairchild Semiconductor Corporation
FJAFS1510A Rev. A2
3
www.fairchildsemi.com
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