DTV110D Просмотр технического описания (PDF) - STMicroelectronics
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DTV110D Datasheet PDF : 10 Pages
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DTVseries
Fig. 8.1: Forward recovery time versus dIF/dt.
Fig. 8-2: Forward recovery time versus dIF/dt.
tfr(ns)
800
750
700
650
600
550
500
450
400
0
DTV16
dIF/dt(A/µs)
20 40
DTV32
DTV64
60 80
IF=Ip
90% confidence
Tj=125°C
100 120 140
tfr(ns)
700
650
600
550
500
DTV56
450
400
DTV110
350
dIF/dt(A/µs)
300
0
20 40 60
IF=Ip
90% confidence
Tj=125°C
DTV82
80 100 120 140
Fig. 9: Dynamic parameters versus junction
temperature.
VFP,IRM,Qrr[Tj]/VFP,IRM,Qrr[Tj=125°C]
1.2
1.0
0.8
VFP
0.6
IRM
0.4
Qrr
0.2
Tj(°C)
0.0
0
20 40 60 80 100 120 140
Fig. 10: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
200
100
DTV110
DTV82
Tj=25°C
F=1MHz
DTV16
10
1
1
DTV32
DTV56
DTV64
VR(V)
10
100 200
Fig. 11-1: Relative variation of thermal impedance
junction to case versus pulse duration
(ISOWATT220AC).
K=[Zth(j-c)/Rth(j-c)]
1.0
δ = 0.5
0.5
δ = 0.2
0.2
δ = 0.1
Single pulse
0.1
1E-2
T
1E-1
tp(s)
δ=tp/T
1E+0
tp
1E+1
Fig. 12-2: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220AC).
K=[Zth(j-c)/Rth(j-c)]
1.0
0.5 δ = 0.5
δ = 0.2
δ = 0.1
0.2
Single pulse
0.1
1E-3
T
1E-2
tp(s)
δ=tp/T
1E-1
tp
1E+0
8/10
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