1H0165R Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге

Компоненты Описание

производитель

1H0165R

Fairchild Power Switch(FPS)

Fairchild Semiconductor 

KA1H0165RN/KA1H0165R

Absolute Maximum Ratings

Parameter

Maximum Drain Voltage (1)

Drain-Gate Voltage (RGS=1MΩ)

Gate-Source (GND) Voltage

Drain Current Pulsed (2)

Single Pulsed Avalanche Energy (3)

Continuous Drain Current (TC=25°C)

Continuous Drain Current (TC=100°C)

Maximum Supply Voltage

Input Voltage Range

Total Power Dissipation

Symbol

VD,MAX

VDGR

VGS

IDM

EAS

ID

ID

VCC,MAX

VFB

PD

Darting

Operating Ambient Temperature

Storage Temperature

TA

TSTG

Notes:

1. Tj = 25°C to 150°C

2. Repetitive rating: Pulse width limited by maximum junction temperature

3. L = 80mH, VDD = 50V, RG = 27Ω, starting Tj = 25°C

Value

650

650

±30

4.0

95

1.0

0.7

30

-0.3 to VSD

40

0.32

-25 to +85

-55 to +150

Unit

V

V

V

ADC

mJ

ADC

ADC

V

V

W

W/°C

°C

°C

2

Share Link: