MC33290 Просмотр технического описания (PDF) - Motorola => Freescale
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MC33290 Datasheet PDF : 4 Pages
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MC33290
ELECTRICAL CHARACTERISTICS (continued) (Characteristics noted under conditions of 4.75 V ≤ VDD ≤ 5.25 V, 8.0 V ≤ VBB,
HSIP ≤ 18.0 V, –40°C ≤ TC ≤ 125°C, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
POWER AND CONTROL
Chip Enable Pull–Down Current (Note 3)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Tx Input Low Voltage Threshold (RISO = 510 Ω) (Note 4)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Tx Input High Voltage Threshold (RISO = 510 Ω) (Note 5)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Tx Pull–Up Current (Note 6)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Rx Output Low Voltage Threshold (RISO = 510 Ω, Tx = 0.2 VDD,
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Rx Sinking 1.0 mA)
IPD(CEN)
2.0
–
40
µA
VLTP(Tx)
–
–
0.3 x VDD
V
VUTP(Tx) 0.7 x VDD
–
–
V
IPU(Tx)
–40
–
–2.0
µA
VL(Rx)
–
–
0.2 VDD
V
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Rx Output High Voltage Threshold (RISO = 510 Ω, Tx = 0.8 VDD,
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Rx Sourcing 250 µA)
VH(Rx)
0.8 VDD
–
–
V
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Thermal Shutdown (Note 7)
TLIM
150
170
–
°C
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ NOTES 3.Enable pin has an internal current pull–down equivalent to greater than 50 kΩ.
4. Measured by ramping Tx down from 0.7 VDD to 0.3 VDD and noting Tx value at which ISO falls below 0.2 VBB.
5. Measured by ramping Tx up from 0.3 VDD to 0.7 VDD and noting the value at which ISO rises above 0.9 VBB.
6. Tx pin has internal current pull–up equivalent to greater than 50 kΩ. Pull–Up current measure with Tx pin at 0.7 VDD.
7. Thermal Shutdown performance (TLIM) is guaranteed by design but not production tested.
ELECTRICAL CHARACTERISTICS (Characteristics noted under conditions of 4.75 V ≤ VDD ≤ 5.25 V, 8.0 V ≤ VBB, HSIP ≤ 18.0 V,
–40°C ≤ TC ≤ 125°C, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ISO I/O
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Input Low Voltage Threshold (RISO = 0 Ω, Tx = 0.8 VDD) (Note 1)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Input High Voltage Threshold (RISO = 0 Ω, Tx = 0.8 VDD) (Note 2)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Input Hysteresis (Note 3)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Internal Pull–Up Current (Note 4)
(RISO = ∞ Ω, Tx = 0.8 VDD, VISO = 0.5 VBB)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Short Circuit Current Limit (Note 5) (RISO = 0 Ω, Tx = 0.4 VDD, VISO = VBB)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Output Low Voltage Threshold (RISO = 510 Ω, Tx = 0.2 VDD)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Output High Voltage Threshold (RISO = ∞ Ω, Tx = 0.8 VDD)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Fall Time (Note 6) (RISO = 510 Ω to VBB, CISO = 10 nF to Ground)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ISO Propagation Delay (Note 7)
VLTP(ISO)
VUTP(ISO)
VHys(ISO)
IPU(ISO)
–
0.8 x VBB
0.01 x VBB
–5.0
ISC(ISO)
VL(ISO)
VH(ISO)
tfall(ISO)
tPD(ISO)
50
–
0.95 x VBB
–
–
0.4 x VBB
V
–
–
V
–
0.1 x VBB
V
–
–90
µA
–
1000
mA
– 0.125 x VBB
V
–
–
V
–
2.0
µs
µs
High to Low; (RISO = 510 Ω, CISO = 500 pF) (Note 8)
–
–
2.0
Low to High; (RISO = 510 Ω, CISO = 500 pF) (Note 9)
–
–
2.0
NOTES: 1. ISO ramped from 0.8 VBB to 0.4 VBB, Monitor Rx, Value of ISO voltage at which Rx transitions to 0.3 VDD.
2. ISO ramped from 0.4 VBB to 0.8 VBB, Monitor Rx, Value of ISO voltage at which Rx transitions to 0.7 VDD.
3. Input Hysteresis, VHys(ISO) = VUTP(ISO) – VLTP(ISO).
4. ISO Pull–Up has >100 kΩ internal pull–up to VBB.
5. ISO has internal current limit.
6. Time required ISO voltage to transition from 0.8 VBB to 0.2 VBB.
7. Changes in the value of CISO affect the rise and fall time but have minimal effect on Propagation Delay.
8. Step Tx voltage from 0.2 VDD to 0.8 VDD; Time measured from VUTP(ISO) until VISO reaches 0.3 VBB.
9. Step Tx voltage from 0.8 VDD to 0.2 VDD; Time measured from VLTP(ISO) until VISO reaches 0.7 VBB.
MOTOROLA ANALOG IC DEVICE DATA
3
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