MC33290P Просмотр технического описания (PDF) - Motorola => Freescale
Номер в каталоге
Компоненты Описание
производитель
MC33290P Datasheet PDF : 4 Pages
| |||
MC33290
Figure 1. Simplified Block Diagram
VBB
1
Rx
6
ISO
4
Master RHys
Bias
CEN
40 V
VDD8
Thermal
7
Shutdown
Gnd
Tx
3
5
MAXIMUM RATINGS (All voltages are with respect to ground, unless otherwise noted.)
Rating
Symbol
Value
Unit
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ VDD DC Supply Voltage
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ VBB Load Dump Peak Voltage
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ISO Pin Load Dump Peak Voltage
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ISO Short Circuit Current Limit
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ESD Voltage (Note 1)
VDD
–0.3 to 7.0
V
VBB(LD)
45
V
VISO
40
V
IISO(LIM)
1.0
A
V
Human Body Model (Note 2)
VESD1
2000
Machine Model (Note 3)
ISO Clamp Energy (Note 4)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Storage Temperature
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Operating Case Temperature
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Operating Junction Temperature
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Power Dissipation (TA = 25°C)
Soldering Temperature (for 10 seconds)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Thermal Resistance (Junction–to–Ambient)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ NOTES: 1.ESDdataavailableuponrequest.
VESD2
Eclamp
Tstg
TC
TJ
PD
Tsolder
RθJA
200
10
–55 to +150
–40 to +125
–40 to +150
0.8
260
150
mJ
°C
°C
°C
W
°C
°C/W
2. Testing in accordance with Human Body Model (CZap = 100 pF, RZap = 1500 Ω).
3. Testing in accordance with Machine Model (CZap = 100 pF, RZap = 0Ω).
4. Non–repetitive clamping capability at 25°C.
ELECTRICAL CHARACTERISTICS (Characteristics noted under conditions of 4.75 V ≤ VDD ≤ 5.25 V, 8.0 V ≤ VBB,
HSIP ≤ 18.0 V, –40°C ≤ TC ≤ 125°C, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
POWER AND CONTROL
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ VDD Sleep State Current (HSIM = HSIP, LSIM = LSIP = 0 V,
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ VRSM = VRSP = 0 V, Tx = 0.8 VDD, CEN = 0.3 VDD)
IDD(SS)
–
–
0.1
mA
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ VDD Quiescent Operating Current (HSIM = HSIP – 0.3 V, LSIM = 0 V,
IDD(Q)
–
–
1.0
mA
LSIP = 0.3 V, VRSM = 0 V, VRSP = –0.5 V, Tx = 0.2 VDD, CEN = 0.7 VDD)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ VBB Sleep State Current (VBB = 16 V, HSIM = HSIP, LSIM = LSIP = 0 V,
IBB(SS)
–
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ VRSM = VRSP = 0 V, Tx = 0.8 VDD, CEN = 0.3 VDD)
–
50
µA
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ VBB Quiescent Operating Current (HSIM = HSIP – 0.3 V, LSIM = 0 V,
IBB(Q)
–
–
1.0
mA
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ LSIP = 0.3 V, VRSM = 0 V, VRSP = –0.5 V, Tx = 0.2 VDD, CEN = 0.7 VDD)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Chip Enable
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Input High Voltage Threshold (Note 1)
V
VIH(CEN) 0.7 VDD
–
–
Input Low Voltage Threshold (Note 2)
VIL(CEN)
–
–
0.3 VDD
NOTES: 1. When IBB transitions to >100 µA.
2. When IBB transitions to <100 µA.
2
MOTOROLA ANALOG IC DEVICE DATA
Share Link: 