TDA2170 Просмотр технического описания (PDF) - STMicroelectronics
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TDA2170 Datasheet PDF : 7 Pages
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TDA2170
ABSOLUTE MAXIMUM RATINGS
Symbol
Vs
V7, V8
V5
V2, V3
Io
Io
Io
I5
I5
Ptot
Tstg, Tj
Parameter
Supply Voltage (pin 4)
Flyback Peak Voltage
Voltage at Pin 5
Amplifier Input Voltage
Output Peak Current (non repetitive, t = 2 msec)
Output Peak Current at f = 50 Hz, t ≤ 10 µsec
Output Peak Current at f = 50 Hz, t > 10 µsec
Pin 5 DC Current at V7 < V4
Pin 5 Peak to Peak Flyback Current at f = 50 Hz, tfly ≤ 1.5 msec
Total Power Dissipation at Tcase = 60 °C
Storage and Junction Temperature
Value
Unit
35
V
60
V
+ Vs
+ Vs – 0.5
V
2.5
A
3
A
2
A
100
mA
3
A
30
W
– 40 to 150
°C
THERMAL DATA
Symbol
Rth (j-c)
Rth (j-a)
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction–ambient
Value
Unit
Max
3
°C/W
Max
40
°C/W
ELECTRICAL CHARACTERISTICS
(refer to the test circuits, VS = 35 V, Tamb = 25 °C unless otherwise specified)
Symbol
I4
I8
I3
I2
V9
∆V9
∆VS
V5L
V7
V7L
V7H
R9
Tj
Parameter
Pin 4 Quiescent Current
Pin 8 Quiescent Current
Amplifier Input Bias Current
Amplifier Input Bias Current
Reference Voltage
Reference Voltage Drift vs. Supply Voltage
Pin 5 Saturation Voltage to GND
Quiescent Output Voltage
Output Saturation Voltage to GND
Output Saturation Voltage to Supply
Reference Voltage Output Resistance
Junction Temperature for Thermal Shut
Down
Test Conditions
I5 = 0 ; I7 = 0 ; V3 = 3 V
I5 = 0 ; I7 = 0 ; V3 = 3 V
V3 = 1 V
V2 = 1 V
I9 = 0
VS = 15 to 30 V
I5 = 20 mA
VS = 35 V ; Ra = 13 kΩ
VS = 15 V ; Ra = 13 kΩ
I7 = 1.2 A
I7 = 0.7 A
– I7 = 1.2 A
– I7 = 0.7 A
Min. Typ. Max. Unit Fig.
8 16 mA 1a
16 36 mA 1a
– 0.1 – 1 µA 1a
– 0.1 – 1 µA 1a
2.2
V 1a
1
2 mV/V 1a
1
V 1c
18
V 1d
7.5
V 1d
1 1.4 V 1c
0.7 1
V 1c
1.6 2.2 V 1b
1.3 1.8 V 1b
2.1
kΩ
140
°C
3/7
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