2SD1207 Просмотр технического описания (PDF) - ON Semiconductor

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производитель

2SD1207

Bipolar Transistor 50V, 2A, Low VCE(sat) NPN Single MP

ON Semiconductor 

Electrical Characteristics at Ta = 25°C

2SD1207

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Symbol

ICBO

IEBO

hFE1

hFE2

fT

Cob

VCE(sat)

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

Conditions

VCB=50V, IE=0A

VEB=4V, IC=0A

VCE=2V, IC=100mA

VCE=2V, IC=1.5A

VCE=10V, IC=50mA

VCB=10V, f=1MHz

IC=1A, IB=50mA

IC=1A, IB=50mA

IC=10μA, IE=0A

IC=1mA, RBE=∞

IE=10μA, IC=0A

*: The 2SD1207 is graded as follows by hFE at 100mA :

Rank

S

T

hFE

140 to 280

200 to 400

Ordering Information

Device

2SD1207S

2SD1207S-AE

2SD1207T

2SD1207T-AE

Package

MP

Shipping

500pcs./bag

1,000pcs./box

500pcs./bag

1,000pcs./box

Memo

Pb Eree

Ratings

min

typ

140

40

150

12

0.15

0.9

60

50

6

Unit

max

0.1 μA

0.1 μA

400

MHz

pF

0.4 V

1.2 V

V

V

V

No.930-2/5

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