BGA2012 Просмотр технического описания (PDF) - NXP Semiconductors.
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BGA2012 Datasheet PDF : 12 Pages
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NXP Semiconductors
1900 MHz high linear low noise amplifier
Product specification
BGA2012
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction
to solder point
CONDITIONS
Ptot = 135 mW; Ts 100 C
VALUE
350
UNIT
K/W
CHARACTERISTICS
RF input AC coupled; VS = 3 V; IS = 7 mA; f = 1900 MHz; Tj = 25 C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
IS
IC
RL IN
supply current
5
7.5
control current
0.11
return losses input
typical application; see Fig.2
11
high IP3 (see Fig.2; stripline = 0 mm)
20
high IP3 (see Fig.2; stripline = 0.5 mm)
14
RL OUT
return losses output typical application; see Fig.2
9
high IP3 (see Fig.2; stripline = 0 mm)
10
high IP3 (see Fig.2; stripline = 0.5 mm)
8
|s21|2
insertion power gain typical application (see Fig.2)
14
high IP3 (see Fig.2; stripline = 0 mm)
16
high IP3 (see Fig.2; stripline = 0.5 mm)
14
NF
noise figure
typical application; see Fig.2; IS = 7 mA
1.7
high IP3 (see Fig.2; stripline = 0 mm)
2.2
high IP3 (see Fig.2; stripline = 0.5 mm)
2.3
IP3in
input intercept point typical application; see Fig.2
7
high IP3 (see Fig.2; stripline = 0 mm)
7
high IP3 (see Fig.2; stripline = 0.5 mm)
10
MAX.
10
UNIT
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
2000 Dec 04
3
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