BGA2712,115 Просмотр технического описания (PDF) - NXP Semiconductors.
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BGA2712,115 Datasheet PDF : 13 Pages
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NXP Semiconductors
MMIC wideband amplifier
Product specification
BGA2712
FEATURES
Internally matched to 50
Wide frequency range (3.2 GHz at 3 dB bandwidth)
Flat 21 dB gain (DC to 2.6 GHz at 1 dB flatness)
5 dBm saturated output power at 1 GHz
Good linearity (11 dBm IP3(out) at 1 GHz)
Unconditionally stable (K > 1.5).
PINNING
PIN
1
2, 5
3
4
6
VS
GND2
RF out
GND1
RF in
DESCRIPTION
APPLICATIONS
LNB IF amplifiers
Cable systems
ISM
General purpose.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
654
1
6
3
123
4
2, 5
Top view
MAM455
Marking code: E2-.
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
VS
IS
s212
NF
PL(sat)
PARAMETER
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
CONDITIONS
f = 1 GHz
f = 1 GHz
f = 1 GHz
TYP.
5
12.3
21.3
3.9
4.8
MAX.
6
UNIT
V
mA
dB
dB
dBm
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
VS
IS
Ptot
Tstg
Tj
PD
PARAMETER
DC supply voltage
supply current
total power dissipation
storage temperature
operating junction temperature
maximum drive power
CONDITIONS
RF input AC coupled
Ts 90 C
MIN.
65
MAX.
6
35
200
+150
150
10
UNIT
V
mA
mW
C
C
dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2002 Sep 10
2
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