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2SC54190RA

Silicon NPN triple diffusion planar type

Panasonic Corporation 

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC5419

Silicon NPN triple diffusion planar type

For low-frequency output amplification

■ Features

/ • High collector-emitter voltage (Base open) VCEO

• High transition frequency fT

e • Allowing supply with the radial taping

6.9±0.1

0.7 4.0

0.65 max.

Unit: mm

2.5±0.1

(0.8)

nc d le stage. ■ Absolute Maximum Ratings Ta = 25°C

yc Parameter

Symbol Rating

Unit

a e lifec Collector-base voltage (Emitter open) VCBO

300

V

t Collector-emitter voltage (Base open) VCEO

300

V

n u uc Emitter-base voltage (Collector open) VEBO

7

V

rod Collector current

IC

70

mA

te tin r P Peakcollectorcurrent

ICP

100

mA

fou . Collector power dissipation *

PC

1

W

ing type tion Junction temperature

Tj

150

°C

w e a Storage temperature

Tstg −55 to +150 °C

in n follo anc pe ped form / Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness

0.45+–00..0150

2.5±0.5

1.05±0.05

2.5±0.5

0.45+–00..0150

123

1: Emitter

2: Collector

3: Base

MT-2-A1 Package

a o ludes ainten nce tyued type test ino.jp/en ■ Electrical Characteristics Ta = 25°C ± 3°C

c inc d m tena ntin d ty t la ic.c Parameter

Symbol

Conditions

Min Typ Max Unit

ed ne in co ue ou on Collector-emitter voltage (Base open)

M is tinu pla ma dis tin ab as Emitter-base voltage (Collector open)

on ed con RL an Collector-emitter cutoff current (Base open)

isc lan is U n.p Forward current transfer ratio *

/D p d ing ico Collector-emitter saturation voltage

D nce llow em Transition frequency

a fo .s Collector output capacitance

ten isit ww (Common base, input open circuited)

VCEO

VEBO

ICEO

hFE

VCE(sat)

fT

Cob

IC = 100 µA, IB = 0

300

IE = 1 µA, IC = 0

7

VCE = 120 V, IB = 0

VCE = 10 V, IC = 5 mA

30

IC = 50 mA, IB = 5 mA

VCB = 10 V, IE = −10 mA, f = 200 MHz 50

VCB = 10 V, IE = 0, f = 1 MHz

V

V

1

µA

220



1.2

V

MHz

10

pF

ain e v ://w Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

M as ttp 2. *: Rank classification

Ple h Rank

P

Q

R

hFE

30 to 100

60 to 150 100 to 220

Publication date: February 2003

SJC00181CED

1

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