2SB0951AR Просмотр технического описания (PDF) - Panasonic Corporation
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2SB0951AR Datasheet PDF : 4 Pages
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Power Transistors
2SB0951 (2SB951), 2SB0951A (2SB951A)
Silicon PNP epitaxial planar type darlington
For midium-speed switching
Complementary to 2SD1277 and 2SD1277A
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
■ Features
• High forward current transfer ratio hFE
• High-speed switching
φ 3.1±0.1
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings TC = 25°C
1.4±0.1
1.3±0.2
Parameter
Symbol Rating
Unit
0.8±0.1
0.5+–00..12
/ Collector-base voltage 2SB0951 VCBO
−60
V
(Emitter open)
2SB0951A
−80
e e) Collector-emitter voltage 2SB0951 VCEO
−60
V
c e. d typ (Base open)
2SB0951A
−80
n d stag tinue Emitter-base voltage (Collector open) VEBO
−7
V
a e cle con Collector current
IC
−8
A
lifecy , dis Peak collector current
ICP
−12
A
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
n u ct ped Collector power
rodu d ty dissipation
te tin ur P tinue Junction temperature
in n llowing fdodiscon Storage temperature
PC
45
W
Ta = 25°C
2
Tj
150
°C
Tstg −55 to +150 °C
C
B
E
s fo lane ■ Electrical Characteristics TC = 25°C ± 3°C
a o clude pe, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d in e ty Collector-emitter voltage 2SB0951 VCEO IC = −30 mA, IB = 0
−60
V
tinue nanc (Base open)
2SB0951A
−80
M is con inte Collector-base cutoff
/Dis , ma current (Emitter open)
2SB0951 ICBO
2SB0951A
D ance type Emitter-base cutoff current (Collector open)
inten nce Forward current transfer ratio
Ma aintena Collector-emitter saturation voltage
ed m Base-emitter saturation voltage
(plan Transition frequency
IEBO
hFE1 *
hFE2
VCE(sat)
VBE(sat)
fT
VCB = −60 V, IE = 0
VCB = −80 V, IE = 0
VEB = −7 V, IC = 0
VCE = −3 V, IC = −4 A
VCE = −3 V, IC = −8 A
IC = −4 A, IB = −8 mA
IC = −4 A, IB = −8 mA
VCE = −10 V, IC = −1 A, f = 1 MHz
1 000
500
−100 µA
−100
−2
mA
10 000
−1.5
V
−2.0
V
20
MHz
Turn-on time
ton
IC = −4 A, IB1 = −8 mA, IB2 = 8 mA
0.5
µs
Storage time
tstg
VCC = −50 V
2.0
µs
Fall time
tf
1.0
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE1
1 000 to 2 500 2 000 to 5 000 4 000 to 10 000
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2003
SJD00030BED
1
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