2SB1302 Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

2SB1302

Bipolar Transisitor –20V, –5A, Low VCE(sat) PNP Single PCP

ON Semiconductor 

2SB1302

Continued from preceding page.

Parameter

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

PC

Tj

Tstg

Conditions

When mounted on ceramic substrate (250mm2×0.8mm)

Ratings

1.3

150

--55 to +150

Electrical Characteristics at Ta=25°C

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Turn-ON Time

Storage Time

Fall Time

Symbol

Conditions

ICBO

IEBO

hFE1

hFE2

fT

Cob

VCE(sat)

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

ton

tstg

tf

VCB=--20V, IE=0A

VEB=--4V, IC=0A

VCE=--2V, IC=--500mA

VCE=--2V, IC=--4A

VCE=--5V, IC=--200mA

VCB=--10V, f=1MHz

IC=--3A, IB=--60mA

IC=--3A, IB=--60mA

IC=--10μA, IE=0A

IC=--1mA, RBE=∞

IE=--10μA, IC=0A

See specified Test Circuit.

Ratings

min

typ

140*

60

--25

--20

--5

320

60

--250

--1.0

40

200

10

max

--500

--500

400*

--500

--1.3

Unit

W

°C

°C

Unit

nA

nA

MHz

pF

mV

V

V

V

V

ns

ns

ns

* : 2SB1302 is classified by 500mA hFE as follows :

Rank

S

T

hFE

140 to 280

200 to 400

Switching Time Test Circuit

IB1

PW=20μs

D.C.≤1%

IB2

OUTPUT

INPUT

VR

RB

RL

50Ω

+

+

100μF

470μF

VBE=5V

VCC= --10V

IC=10IB1= --10IB2= --2A

Ordering Information

Device

2SB1302S-TD-E

2SB1302T-TD-E

Package

PCP

PCP

Shipping

1,000pcs./reel

1,000pcs./reel

memo

Pb Free

No.2555-2/5

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