2PC4617QMB Просмотр технического описания (PDF) - NXP Semiconductors.
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2PC4617QMB Datasheet PDF : 10 Pages
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Nexperia
2PC4617xMB series
50 V, 100 mA NPN general-purpose transistors
7. Characteristics
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
collector-base
cut-off current
IEBO
emitter-base
cut-off current
VCB = 30 V; IE = 0 A
VCB = 30 V; IE = 0 A;
Tj = 150 C
VEB = 4 V; IC = 0 A
-
-
100 nA
-
-
5
A
-
-
100 nA
hFE
DC current gain
VCE = 6 V; IC = 1 mA
2PC4617QMB
120 -
270
2PC4617RMB
180 -
390
VCEsat collector-emitter
IC = 50 mA; IB = 5 mA
[1] -
-
200 mV
saturation voltage
fT
transition frequency VCE = 12 V; IC = 2 mA;
100 -
-
MHz
f = 100 MHz
Cc
collector capacitance VCB = 12 V; IE = ie = 0 A;
-
-
1.5
pF
f = 1 MHz
[1] Pulse test: tp 300 s; 0.02.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
2PC4617XMB_SER
Product data sheet
0.65
0.55
0.35
1
2
0.20
0.12
0.30
0.22
1.05 0.65
0.95
0.30
0.22
3
0.55
0.47
Dimensions in mm
Fig 3. Package outline DFN1006B-3 (SOT883B)
0.40
0.34
0.04 max
11-11-02
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 26 March 2012
.
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