2N7002PT Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
производитель
2N7002PT Datasheet PDF : 16 Pages
| |||
NXP Semiconductors
2N7002PT
60 V, 310 mA N-channel Trench MOSFET
0.7
ID VGS = 4.0 V
(A)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
1.0
Tamb = 25 C
017aaa017
3.5 V
3.25 V
3.0 V
2.75 V
2.5 V
2.0
3.0
4.0
VDS (V)
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical
values
10.0
RDSon
(Ω)
7.5
017aaa019
(1)
(2)
10−3
ID
(A)
10−4
10−5
017aaa018
(1)
(2)
(3)
10−6
0
1
2
3
VGS (V)
Tamb = 25 C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
6.0
RDSon
(Ω)
4.0
017aaa020
5.0
2.5
(3)
(4)
(5)
0.0
0.0
0.2
0.4
0.6
0.8
1.0
ID (A)
(1)
2.0
(2)
0.0
0.0
2.0
4.0
6.0
8.0
10.0
VGS (V)
Tamb = 25 C
(1) VGS = 3.25 V
(2) VGS = 3.5 V
(3) VGS = 4 V
(4) VGS = 5 V
(5) VGS = 10 V
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
ID = 500 mA
(1) Tamb = 150 C
(2) Tamb = 25 C
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
2N7002PT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 July 2010
© NXP B.V. 2010. All rights reserved.
7 of 16
Share Link: 