2N7002PT Просмотр технического описания (PDF) - NXP Semiconductors.
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2N7002PT Datasheet PDF : 16 Pages
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NXP Semiconductors
2N7002PT
60 V, 310 mA N-channel Trench MOSFET
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Ptot
total power dissipation Tamb = 25 C
[2] -
[1] -
Tsp = 25 C
-
Tj
junction temperature
Tamb
ambient temperature
55
Tstg
storage temperature
65
Source-drain diode
IS
source current
Tamb = 25 C
[1] -
Max Unit
250
mW
300
mW
770
mW
150
C
+150 C
+150 C
310
mA
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
120
Pder
(%)
80
017aaa001
120
Ider
(%)
80
017aaa002
40
40
0
−75
−25
25
75
125
175
Tamb (°C)
Fig 1.
Pder
=
--------P----t-o---t-------
Pt o t 25 C
100
%
Normalized total power dissipation as a
function of ambient temperature
0
−75
−25
25
75
125
175
Tamb (°C)
Fig 2.
Ider
=
--------I--D---------
I D 25 C
100
%
Normalized continuous drain current as a
function of ambient temperature
2N7002PT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 July 2010
© NXP B.V. 2010. All rights reserved.
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