2N7002PT Просмотр технического описания (PDF) - NXP Semiconductors.
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2N7002PT Datasheet PDF : 16 Pages
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NXP Semiconductors
2N7002PT
60 V, 310 mA N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Symbol
G
S
D
Description
gate
source
drain
Simplified outline Graphic symbol
3
D
1
2
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
2N7002PT SC-75
plastic surface-mounted package; 3 leads
4. Marking
Table 4. Marking codes
Type number
2N7002PT
Marking code
Z1
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS
drain-source voltage
Tamb = 25 C
-
VGS
gate-source voltage
Tamb = 25 C
-
ID
drain current
VGS = 10 V
[1]
Tamb = 25 C
-
Tamb = 100 C
-
IDM
peak drain current
Tamb = 25 C;
-
single pulse; tp 10 s
Version
SOT416
Max Unit
60
V
20
V
310
mA
240
mA
1.2
A
2N7002PT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 July 2010
© NXP B.V. 2010. All rights reserved.
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