2N7002PT Просмотр технического описания (PDF) - NXP Semiconductors.

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2N7002PT

60 V, 310 mA N-channel Trench MOSFET

NXP Semiconductors. 

2N7002PT

60 V, 310 mA N-channel Trench MOSFET

Rev. 1 — 2 July 2010

Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

1.2 Features and benefits

 Logic-level compatible

 Very fast switching

 Trench MOSFET technology

 AEC-Q101 qualified

1.3 Applications

 Relay driver

 High-speed line driver

 Low-side loadswitch

 Switching circuits

1.4 Quick reference data

Table 1.

Symbol

VDS

VGS

ID

Quick reference data

Parameter

drain-source voltage

gate-source voltage

drain current

RDSon

drain-source on-state

resistance

Conditions

Tamb = 25 C

Tamb = 25 C

Tamb = 25 C;

VGS = 10 V

Tj = 25 C;

VGS = 10 V;

ID = 500 mA

Min Typ Max Unit

-

-

60

V

-

-

20 V

[1] -

-

310 mA

-

1

1.6 

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad

for drain 1 cm2.

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