2N6504 Просмотр технического описания (PDF) - ON Semiconductor
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2N6504 Datasheet PDF : 7 Pages
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2N6504 Series
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
*Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = 25 to 125°C)
2N6504
2N6505
2N6507
2N6508
2N6509
VDRM,
V
VRRM
50
100
400
600
800
On‐State Current RMS (180° Conduction Angles; TC = 85°C)
IT(RMS)
25
A
Average On‐State Current (180° Conduction Angles; TC = 85°C)
IT(AV)
16
A
Peak Non‐repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C)
ITSM
250
A
Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 85°C)
PGM
20
W
Forward Average Gate Power (t = 8.3 ms, TC = 85°C)
PG(AV)
0.5
W
Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 85°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
-40 to +125
°C
Storage Temperature Range
Tstg
-40 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction-to-Case
*Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds
Symbol
RqJC
TL
Max
1.5
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
*āPeak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
-
-
10
mA
-
-
2.0
mA
ON CHARACTERISTICS
*āForward On-State Voltage (Note 2) (ITM = 50 A)
*āGate Trigger Current (Continuous dc)
(VAK = 12 Vdc, RL = 100 W)
TC = 25°C
TC = -40°C
VTM
-
-
1.8
V
IGT
-
9.0 30
mA
-
-
75
*āGate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 W, TC = -40°C)
āGate Non‐Trigger Voltage (VAK = 12 Vdc, RL = 100 W, TJ = 125°C)
*āHolding Current
TC = 25°C
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = -40°C
VGT
-
1.0 1.5
V
VGD
0.2
-
-
V
IH
-
18
40
mA
-
-
80
*āTurn‐On Time (ITM = 25 A, IGT = 50 mAdc)
āTurn‐Off Time (VDRM = rated voltage)
(ITM = 25 A, IR = 25 A)
(ITM = 25 A, IR = 25 A, TJ = 125°C)
tgt
-
1.5 2.0
ms
tq
ms
-
15
-
-
35
-
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off‐State Voltage (Gate Open, Rated VDRM, Exponential Waveform)
*Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
dv/dt
-
50
-
V/ms
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