STD12N65M5 Просмотр технического описания (PDF) - STMicroelectronics

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производитель

STD12N65M5

MOSFET POWER MOSFET N-CH 650V

STMicroelectronics 

STD/F/I/P/U12N65M5

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

td (v)

tr (v)

tf (i)

tc(off)

Voltage delay time

Voltage rise time

Current fall time

Crossing time

Test conditions

VDD = 400 V, ID = 5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 21 and

Figure 24)

Min. Typ. Max Unit

22.6

ns

17.6

ns

-

-

15.6

ns

23.4

ns

Table 7.

Symbol

Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 8.5 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 8.5 A, di/dt = 100 A/µs

VDD = 100 V (see Figure 24)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 8.5 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 24)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

8.5 A

34 A

1.5 V

230

ns

2.2

µC

19

A

280

ns

2.7

µC

19

A

Doc ID 15428 Rev 5

5/23

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