STD12N65M5 Просмотр технического описания (PDF) - STMicroelectronics
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STD12N65M5 Datasheet PDF : 23 Pages
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STD12N65M5, STF12N65M5, STI12N65M5
STP12N65M5, STU12N65M5
N-channel 650 V, 0.39 Ω, 8.5 A MDmesh™ V Power MOSFET
DPAK, I2PAK, TO-220FP, TO-220, IPAK
Features
Type
STD12N65M5
STF12N65M5
STI12N65M5
STP12N65M5
STU12N65M5
VDSS @ RDS(on)
TJmax max
ID
PTOT
710 V
8.5 A
8.5 A(1)
< 0.43 Ω 8.5 A
8.5 A
8.5 A
70 W
25 W
70 W
70 W
70 W
1. Limited only by maximum temperature allowed.
■ Worldwide best RDS(on) * area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
Applications
Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
3
2
1
IPAK
3
1
DPAK
123
I²PAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STD12N65M5
STF12N65M5
STI12N65M5
STP12N65M5
STU12N65M5
June 2011
Marking
Packages
12N65M5
DPAK
TO-220FP
I²PAK
TO-220
IPAK
Doc ID 15428 Rev 5
Packaging
Tape and reel
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