VS-2N690 Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-2N690 Datasheet PDF : 8 Pages
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VS-2N681, VS-2N5205 Series
Vishay Semiconductors
70
TJ = 125 °C
60
Sinusoidal
Current
Waveform
+60° +120°
+30° +90° +180°
DC
50
Controlled
40 Rectifier
Turned
30 Fully On
20
Ø
10
Conduction Angle
0
0 4 8 12 16 20 24 28 32 36
Average On-State Current Over Full Cycle (A)
Fig. 3 - Maximum Low Level On-State Power Loss vs.
Current (Sinusoidal Current Waveform),
2N681 Series
104
4
TJ = 125 °C
DC
Sinusoidal Current Waveform +180°
103
Controlled Rectifier
Turned Fully On
+120°
+90°
4
+60°
+30°
102
4
10
4
1.0
1.0
4 10
Ø
Conduction Angle
4 102
4 103
Average On-State Current Over Full Cycle (A)
Fig. 4 - Maximum High Level On-State Power Loss vs. Current
(Sinusoidal Current Waveform),
2N681 Series
10
9
8
7
6
5
4
3
2
1
0
0
Maximum Allowable
Instantaneous Gate
Power Dissipation
5.0 W
Area of Certain Triggering
Area of All Possible
Triggering Points
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Gate Current (A)
Fig. 5 - Gate Characteristics,
2N681 Series
3
-65 °C
2
25 °C
1
125 °C
VGD (Max.) = 0.25 V
0
0
25
50
75
100
125
Gate Current (mA)
Fig. 5a - Area of All Possible Triggering Points vs. Temperature,
2N681 Series
10-1
101
4
4 1.0
4
10
4
102
Free Convection
Forced Convection at 1000 LFM
4
103
4
104
1.0
Infinite Heatsink
1.0
Mounted on Infinite Heatsink
4
and 4" x 4" x 1/16" Copper Fin
4
Long Time Durations
10-1
10-1
4
4
Short Time Durations
10-2
10-6
4
10-5
4
10-4
4
10-3
4
10-2
10-2
4
10-1
t - Square Wave Pulse Duration (s)
Fig. 6 - Maximum Transient Thermal Impedance, Junction to Case, vs. Pulse Duration,
2N681 Series
Revision: 21-Sep-17
5
Document Number: 93706
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