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EMIF06-MSD02N16(2008) Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
EMIF06-MSD02N16
(Rev.:2008)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
EMIF06-MSD02N16 Datasheet PDF : 12 Pages
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Characteristics
1
Characteristics
EMIF06-MSD02N16
Table 1. Absolute ratings (limiting values)
Symbol
Parameter
ESD IEC 61000-4-2
Contact discharge on DATx_In, CMD_In and CLK_In pins
VPP
On all other pins
Contact discharge
Air discharge
Tj
Maximum junction temperature
Top
Operating temperature range
Tstg
Storage temperature range
Value
Unit
2
kV
8
12
125
°C
- 30 to + 85
°C
- 55 to + 150
°C
Table 2.
Symbol
Electrical characteristics (Tamb = 25 °C)
Parameter
VBR
IRM
VRM
VCL
Rd
IPP
RI/O
CLINE
Breakdown voltage
Leakage current @ VRM
Stand-off voltage
Clamping voltage
Dynamic resistance
Peak pulse current
Series resistance between Input & Output
Input capacitance per line
Symbol
Test conditions
I
IF
VBR
VCL
VRM
VF
IRM
IR
IPP
Min. Typ.
VBR
IRM
R1, R2, R3, R4, R5, R6
R7, R8, R9, R10, R11, R12
R13
IR = 1 mA
VRM = 3 V
Series resistors - tolerance ±20%
Pull-up resistors
Pull-down resistor - tolerance ±20%
Cline
VLINE = 0 V, VOSC = 30 mV, F = 1 MHz
(under zero light conditions)
5
36
45
80
90
375
470
V
Max. Unit
8
V
200
nA
54
Ω
100
kΩ
565
kΩ
20
pF
2/12

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