DSC2A01T0L Просмотр технического описания (PDF) - Panasonic Corporation
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DSC2A01T0L Datasheet PDF : 5 Pages
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DSC2A01
Silicon NPN epitaxial planar type
For low frequency amplification
Features
High forward current transfer ratio hFE with excellent linearity
Low collector-emitter saturation voltage VCE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: C8
Packaging
DSC2A01×0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Operating ambient temperature
Storage temperature
VCBO
50
V
VCEO
40
V
VEBO
15
V
IC
50
mA
ICP
100
mA
PC
200
mW
Tj
150
°C
Topr –40 to +85 °C
Tstg –55 to +150 °C
1: Base
2: Emitter
3: Collector
Panasonic
JEITA
Code
Unit: mm
Mini3-G3-B
SC-59A
TO-236AA/SOT-23
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
VCBO IC = 10 mA, IE = 0
50
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
VCEO
VEBO
ICBO
IC = 1 mA, IB = 0
IE = 10 mA, IC = 0
VCB = 20 V, IE = 0
40
15
0.1
Collector-emitter cutoff current (Base open) ICEO VCE = 20 V, IB = 0
Forward current transfer ratio *1
hFE VCE = 10 V, IC = 2 mA
1
400
2 000
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 1 mA
0.05 0.20
Transition frequency
fT VCE = 10 V, IC = 2 mA
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
Code
R
S
T
Rank
R
S
T
hFE
Marking Symbol
400 to 800
C8R
600 to 1 200
C8S
1 000 to 2 000
C8T
Unit
V
V
V
mA
mA
V
MHz
Publication date: February 2014
Ver. BED
1
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