CY7C1019DV33(2006) Просмотр технического описания (PDF) - Cypress Semiconductor

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Компоненты Описание

производитель

CY7C1019DV33
(Rev.:2006)

1-Mbit (128 K × 8) Static RAM

Cypress Semiconductor 

CY7C1019DV33

Capacitance[4]

Parameter

Description

CIN

COUT

Input Capacitance

Output Capacitance

Thermal Resistance[4]

Parameter

Description

ΘJA

Thermal Resistance

(Junction to Ambient)

ΘJC

Thermal Resistance

(Junction to Case)

Test Conditions

TA = 25°C, f = 1 MHz, VCC = 3.3V

Test Conditions

Still Air, soldered on a 3 × 4.5 inch,

four-layer printed circuit board

AC Test Loads and Waveforms[5]

Max.

Unit

8

pF

8

pF

SOJ TSOP II VFBGA Unit

56.29 62.22 36 °C/W

38.14 21.43 9 °C/W

OUTPUT

Z = 50Ω

* CAPACITIVE LOAD CONSISTS

OF ALL COMPONENTS OF THE

TEST ENVIRONMENT

50 Ω

1.5V

(a)

30 pF*

3.0V

GND

ALL INPUT PULSES

90%

90%

10%

10%

Rise Time: 1 V/ns

(b)

Fall Time: 1 V/ns

High-Z characteristics: R1 317 Ω

3.3V

OUTPUT

5 pF

R2

351Ω

(c)

Notes

4. Tested initially and after any design or process changes that may affect these parameters.

5. AC characteristics (except High-Z) are tested using the load conditions shown in Figure (a). High-Z characteristics are tested for all speeds using the test load

shown in Figure (c).

Document #: 38-05481 Rev. *D

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