CY7C1019DV33(2006) Просмотр технического описания (PDF) - Cypress Semiconductor
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CY7C1019DV33 Datasheet PDF : 11 Pages
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CY7C1019DV33
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VCC to Relative GND[3] ... –0.3V to + 4.6V
DC Voltage Applied to Outputs
in High-Z State[3] ....................................–0.3V to VCC + 0.3V
DC Input Voltage[3] ................................ –0.3V to VCC + 0.3V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... > 200 mA
Operating Range
Range
Industrial
Ambient
Temperature
–40°C to +85°C
VCC
3.3V ± 0.3V
Speed
10 ns
Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
VOH
Output HIGH Voltage
VCC = Min., IOH = –4.0 mA
VOL
Output LOW Voltage
VCC = Min., IOL = 8.0 mA
VIH
Input HIGH Voltage
VIL
Input LOW Voltage[3]
IIX
Input Leakage Current
GND < VI < VCC
IOZ
Output Leakage Current
GND < VI < VCC, Output Disabled
ICC
VCC Operating Supply Current VCC = Max.,
IOUT = 0 mA,
f = fMAX = 1/tRC
100MHz
83MHz
66MHz
40MHz
ISB1
Automatic CE Power-down Max. VCC, CE > VIH
Current—TTL Inputs
VIN > VIH or VIN < VIL, f = fMAX
ISB2
Automatic CE Power-down Max. VCC, CE > VCC – 0.3V,
Current—CMOS Inputs
VIN > VCC – 0.3V or VIN < 0.3V, f = 0
–10 (Industrial)
Min.
Max.
2.4
0.4
2.0
–0.3
VCC + 0.3
0.8
–1
+1
–1
+1
60
55
45
30
10
3
Unit
V
V
V
V
µA
µA
mA
mA
mA
mA
mA
mA
Note
3. VIL (min.) = –2.0V and VIH(max) = VCC + 1V for pulse durations of less than 5 ns.
Document #: 38-05481 Rev. *D
Page 3 of 11
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