N25S830HAS22IT Просмотр технического описания (PDF) - ON Semiconductor
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Компоненты Описание
производитель
N25S830HAS22IT Datasheet PDF : 15 Pages
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N25S0830HA
Page and Burst WRITE Sequence
CS
SCK 0 1 2 3 4 5 6 7 8 9 10 11 21 22 23 24 25 26 27 28 29 30 31
Instruction
16-bit address
SI 0 0 0 0 0 0 1 0 15 14 13 12
21076543210
ADDR 1
Data In to ADDR 1
SO
High-Z
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Data In to ADDR 2
Data In to ADDR 3
Data In to ADDR n
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 ... 7 6 5 4 3 2 1 0
High-Z
Page WRITE Sequence
SI
16-bit address
Page address (X)
Word address (Y)
SO
Data Words: sequential, at the end of the page the
address wraps back to the beginning of the page
Page X
Word Y
Page X Page X
Word Y+1 Word Y+2
High-Z
Page X Page X
Word 31 Word 0
Page X
Word 1
Burst WRITE Sequence
SI
16-bit address
Page address (X)
Word address (Y)
SO
...
...
Page X Page X
Word Y Word Y+1
Page X Page X
Word 31 Word 0
Page X
Word 1
Page X Page X+1 Page X+1
Word Y-1 Word Y Word Y+1
Data Words: sequential, at the end of the page the address wraps to the beginning of the page and
continues incrementing up to the starting word address. At that time, the address increments to the
next page and the burst continues.
High-Z
Rev. 9 | Page 10 of 15 | www.onsemi.com
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