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23LC512

512Kbit SPI Serial SRAM with SDI and SQI Interface

Microchip Technology 

23A512/23LC512

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (†)

VCC.............................................................................................................................................................................6.5V

All inputs and outputs w.r.t. VSS ......................................................................................................... -0.3V to VCC +0.3V

Storage temperature ...............................................................................................................................-65°C to +150°C

Ambient temperature under bias .............................................................................................................-40°C to +125°C

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an

extended period of time may affect device reliability.

TABLE 1-1: DC CHARACTERISTICS

DC CHARACTERISTICS

Industrial (I): TA = -40°C to +85°C

Automotive (E): TA = -40°C to +125°C

Param.

No.

Sym.

Characteristic

Min. Typ. Max. Units

Test Conditions

D001 VCC

Supply voltage

1.7

—

2.2

V 23A512

2.5

5.5

23LC512

D002 VIH

High-level input

voltage

0.7 VCC — VCC + 0.3 V —

D003 VIL

Low-level input

voltage

-0.3

— 0.2 VCC V 23A512

0.1 VCC

23LC512

D004 VOL

D005 VOH

D006 ILI

D007 ILO

Low-level output

voltage

High-level output

voltage

Input leakage

current

Output leakage

current

—

—

VCC - 0.5 —

—

—

—

—

0.2

V IOL = 1 mA

—

V IOH = -400 A

±1

A CS = VCC, VIN = VSS OR VCC

±1

A CS = VCC, VOUT = VSS OR VCC

D008 ICC Read Operating current

D009 ICCS

Standby current

—

1

—

3

—

1

—

—

—

4

—

—

10

mA FCLK = 20 MHz; SO = O, 2.2V

10

mA FCLK = 20 MHz; SO = O, 5.5V

4

A CS = VCC = 2.2V, Inputs tied to

VCC or VSS, I-Temp

12

A CS = VCC = 2.2V, Inputs tied to

VCC or VSS, E-Temp

10

A CS = VCC = 5.5V, Inputs tied to

VCC or VSS, I-Temp

20

A CS = VCC = 5.5V, Inputs tied to

VCC or VSS, E-Temp

D010 CINT

Input capacitance

—

—

7

pF VCC = 5.0V, f = 1 MHz, TA = 25°C

(Note 1)

D011 VDR

RAM data retention

—

1.0

—

V (Note 2)

voltage

Note 1:

2:

3:

This parameter is periodically sampled and not 100% tested.

This is the limit to which VCC can be lowered without losing RAM data. This parameter is periodically

sampled and not 100% tested.

Typical measurements taken at room temperature.

DS20005155B-page 2

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