MML20211HT1 Просмотр технического описания (PDF) - Freescale Semiconductor

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Компоненты Описание

производитель

MML20211HT1

Enhancement Mode pHEMT Technology (E--pHEMT)

Freescale Semiconductor 

Table 4. Electrical Characteristics (VDD = 5 Vdc, 2140 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit)

Characteristic

Symbol

Min

Typ

Max

Small--Signal Gain (S21)

Input Return Loss (S11)

Gp

15

18.6

—

IRL

—

--16.7

—

Output Return Loss (S22)

ORL

—

--26.6

—

Power Output @ 1dB Compression

P1dB

—

21.3

—

Third Order Input Intercept Point

IIP3

—

14.4

—

Third Order Output Intercept Point

OIP3

—

33

—

Reverse Isolation (S12)

|S12|

—

--35

—

Noise Figure (1)

NF

—

0.65

—

Supply Current (2)

IDD

45

60

85

Supply Voltage

VDD

—

5

—

1. Noise figure value calculated with connector losses removed.

2. DC current measured with no RF signal applied.

Unit

dB

dB

dB

dBm

dBm

dBm

dB

dB

mA

V

Table 5. Functional Pin Description

Pin

Number

Pin Function

1

RFin

2

RFin

3

RF Input Matching Termination

4

Bias Voltage DC Supply

5

RF Feedback

6

RFout/DC Supply

7

RFout/DC Supply

8

No Connection

RFin 1

RFin 2

RFMATCH 3

VBIAS 4

GND

(Top View)

8 N.C.

7 RFout

6 RFout

5 FB

Figure 1. Pin Connections

Table 6. ESD Protection Characteristics

Test Methodology

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

Table 7. Moisture Sensitivity Level

Test Methodology

Per JESD22--A113, IPC/JEDEC J--STD--020

Class

0

A

IV

Rating

Package Peak Temperature

Unit

1

260

C

MML20211HT1

2

RF Device Data

Freescale Semiconductor

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