1SS387CT Просмотр технического описания (PDF) - Toshiba
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1SS387CT Datasheet PDF : 6 Pages
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1SS387CT
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
85
V
Reverse voltage
VR
80
Peak forward current
IFM
200
mA
Average rectified current
IO
100
Non-repetitive peak forward surge current
IFSM
1
A
Power dissipation
PD (Note 1)
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
5. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
Test Condition
VF(1)
VF(2)
VF(3)
IR(1)
IR(2)
Ct
trr
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 30 V
VR = 80 V
VR = 0 V, f = 1 MHz
IF = 10 mA
See Fig. 5.1.
Min
Typ.
Max
Unit
0.62
V
0.75
0.98
1.2
0.1
µA
0.5
0.5
pF
1.6
ns
Fig. 5.1 Reverse recovery time (trr) Test circuit
2
2014-04-04
Rev.3.0
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