1SS387CT Просмотр технического описания (PDF) - Toshiba
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1SS387CT Datasheet PDF : 6 Pages
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Switching Diodes Silicon Epitaxial Planar
1SS387CT
1. Applications
• Ultra-High-Speed Switching
2. Features
(1) Small package
(2) Low forward voltage: VF(3) = 0.98 V (typ.)
(3) Fast reverse recovery time: trr = 1.6 ns (typ.)
(4) Small total capacitance: Ct = 0.5 pF (typ.)
3. Packaging and Internal Circuit
CST2
1SS387CT
1: Cathode
2: Anode
Start of commercial production
2004-08
1
2014-04-04
Rev.3.0
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