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EMIF06-USD05F3 Просмотр технического описания (PDF) - STMicroelectronics

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EMIF06-USD05F3 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Characteristics
1
Characteristics
EMIF06-USD05F3
Symbol
Table 1. Absolute maximum ratings (Tamb = 25 °C)
Parameter
Value
Unit
ESD discharge IEC 61000-4-2, level 4
Air discharge card side
VPP
Contact discharge card side
Air discharge IC side
Contact discharge IC side
Tj Maximum junction temperature
Top Operating temperature range
Tstg Storage temperature range
15
8
kV
2
2
125
°C
- 30 to + 85 °C
- 55 to + 150 °C
Figure 2. Electrical characteristics (definitions)
I
Symbol
Parameter
VBR
=
Breakdown voltage
VRM
=
Stand-off voltage
IRM
=
Leakage current at VRM
VCLVBR VRM
IRM
V
Cline
=
Line capacitance
IPP
Symbol
VBR
IRM
Rline
Cline
Fc
S21
Table 2. Electrical characteristics (values, Tamb = 25 °C)
Parameter
Test conditions Min. Typ. Max. Unit
Breakdown voltage
Leakage current at VRM
Serial line resistor
Total line capacitance
-3dB cut-off frequency
Attenuation
IR = 1 mA
VRM = 3 V
6
V
100 nA
32 40 48 Ω
VBIAS = 2.4 V
11 14 pF
Zsource = Zload = 50
300
MHz
F = 900 MHz
-25 -30
dB
2/8
DocID025910 Rev 1

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