RF1S30N06LE Просмотр технического описания (PDF) - Fairchild Semiconductor

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RF1S30N06LE

45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

Fairchild Semiconductor 

RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM

Typical Performance Curves (Continued)

300

100

STARTING TJ = +25oC

10

STARTING TJ = +150oC

If R = 0

tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)

If R ≠ 0

1 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]

0.01

0.1

1

10

tAV, TIME IN AVALANCHE (ms)

FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING

Test Circuits and Waveforms

tP

IAS

BVDSS

VDS

VDD

tAV

FIGURE 14. UNCLAMPED ENERGY WAVEFORMS

VARY tP TO OBTAIN

RG

REQUIRED PEAK IAS

VGS

VDS

L

DUT

+

VDD

-

0V

tP

IL

0.01Ω

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT

VDS

tON

tD(ON)

tR

90%

10%

VGS

10%

50%

PULSE WIDTH

tOFF

tD(OFF)

tF

90%

10%

90%

50%

FIGURE 16. RESISTIVE SWITCHING WAVEFORMS

VGS

0V

RGS

VDD

RL

VDS

DUT

FIGURE 17. RESISTIVE SWITCHING TEST CIRCUIT

3-37

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