RF1S30N06LE Просмотр технического описания (PDF) - Fairchild Semiconductor
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RF1S30N06LE
Fairchild Semiconductor
RF1S30N06LE Datasheet PDF : 6 Pages
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Specifications RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
tD(ON)
tR
tD(OFF)
tF
tOFF
QG(TOT)
QG(10)
QG(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = 60V,
VGS = 0V
TC = +25oC
TC = +150oC
VGS = ±20V
ID = 45A, VGS = 10V
VDD = 30V, ID = 45A
RL = 0.667Ω, VGS = +10V
RGS = 3.6Ω
VGS = 0 to 20V
VGS = 0 to 10V
VDD = 48V,
ID = 45A,
RL = 1.07Ω
VGS = 0 to 2V
VDS = 25V, VGS = 0V
f = 1MHz
MIN
TYP MAX UNITS
60
-
-
V
2
-
4
V
-
-
1
µA
-
-
50
µA
-
-
100
nA
-
-
0.028
Ω
-
-
120
ns
-
12
-
ns
-
74
-
ns
-
37
-
ns
-
16
-
ns
-
-
80
ns
-
125
150
nC
-
67
80
nC
-
3.7
4.5
nC
-
2050
-
pF
-
600
-
pF
-
200
-
pF
-
-
1.14
oC/W
-
-
80
oC/W
Source-Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
Reverse Recovery Time
VSD
ISD = 45A
-
tRR
ISD = 45A, dISD/dt = 100A/µs
-
-
1.5
V
-
125
ns
3-34
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