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NTE870 Просмотр технического описания (PDF) - NTE Electronics

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NTE870 Datasheet PDF : 3 Pages
1 2 3
NTE870
Integrated Circuit
Dual Operational Transconductance Amp
Description:
The NTE870 consists of two current controlled transconductance amplifiers each with differential in-
puts and a push–pull output. The two amplifiers share common supplies but otherwise operate inde-
pendently. Linearizing diodes are provided at the inputs to reduce distortion and allow higher input
levels resulting in a 10dB signal–to–noise improvement referenced to 0.5 percent THD. Controlled
impedance buffers are provided which are especially designed to complement the dynamic range of
the amplifiers.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Supply Voltage, V+/V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V or ±18V
Differential Input Voltage, VID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5V
Diode Bias Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mA
Amp Bias Current, IABC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mA
Buffer Output Current, Io . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 570mW
DC Input Voltage, VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V+ to V–
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –20° to +75°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Electrical Characteristics: (TA = +25°C, V+/V– = ±15V, IABC = 500µA unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input Offset Voltage (VOS)
Input Offset Voltage
VOS Including Diodes
Input Offset Change
Input Bias Current
VIO
IABC = 5µA
Diode Base Current, ID = 500µA
5µA IABC 500µA
IB
TA = –20° to +75°C
0.4 5.0 mV
0.3 5.0 mV
0.5 5.0 mV
0.1
mV
0.4 5.0
µA
1.0 8.0
µA

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