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BUK1M200-50SGTD,11 Просмотр технического описания (PDF) - NXP Semiconductors.

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BUK1M200-50SGTD,11
NXP
NXP Semiconductors. NXP
BUK1M200-50SGTD,11 Datasheet PDF : 15 Pages
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BUK1M200-50SGTD
Quad channel logic level TOPFET
Rev. 01 — 31 March 2003
Product data
1. Product profile
1.1 Description
Quad temperature and overload protected power switch based on TOPFET™ Trench
technology in a 20-pin surface mount plastic package.
Product availability:
BUK1M200-50SGTD in SOT163-1 (SO20).
1.2 Features
s Power TrenchMOS™
s 5V logic compatible
s Overtemperature protection
s Current trip protection
s Overload protection
s ESD protection for all pins
s Input-source voltage resets latched s Overvoltage clamping for turn off of
protection circuitry.
inductive loads
s Control of output stage and supply of s Low operating input current permits
overload protection circuits derived
direct drive by micro-controller.
from input
1.3 Applications
s Low-side driver
s Pulse Width Modulation
s DC switching
s General purpose switch for driving
lamps, motors, solenoids and heaters.
1.4 Quick reference data
Table 1:
Symbol
RDSon
ID
Ptot
Tj
VDS
Quick reference data
Parameter
drain-source on-state resistance
drain current
total power dissipation
junction temperature
drain-source voltage
[1] All devices active.
Min
-
-
[1] -
-
-
Max Unit
200
m
2.7
A
9.4
W
150
°C
50
V

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