FDPF12N50FT(2013) Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDPF12N50FT Datasheet PDF : 8 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
30 VGS = 10.0 V
8.0 V
10
7.0 V
6.5 V
6.0 V
5.5 V
1
0.1
0.05
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
10 20
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.9
0.8
0.7
VGS = 10V
0.6
VGS = 20V
0.5
0
* Note : TJ = 25oC
6
12
18
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
2000
1500
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Note:
1. VGS = 0V
2. f = 1MHz
1000
500
Crss
0
0.1
1
10
30
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
30
10
150oC
25oC
* Notes :
1. VDS = 20V
2. 250μs Pulse Test
1
4
5
6
7
8
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150oC
10
25oC
Notes:
1. VGS = 0V
1
2. 250μs Pulse Test
0.0
0.5
1.0
1.5
2.0
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 250V
8
VDS = 400V
6
4
2
0
* Note : ID = 11.5A
0
4
8
12
16
20
24
Qg, Total Gate Charge [nC]
©2007 Fairchild Semiconductor Corporation
3
FDPF12N50FT Rev. C2
www.fairchildsemi.com
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